View TBN6301_1088220.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Semiconductor
TBN6301 Series
Si NPN Transistor
SOT-323
Unit in mm
2.10.1 1.250.05
Applications
- VHF and UHF wide band amplifier
2.00.2
1.300.1
1 3 2
0.300.1 0.1 Min.
Features
- High gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 10 mA fT = 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz
0.900.1
Pin Configuration 1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings (TA = 25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 8 3 75 150 150 -65 ~ 150 Unit V V V mA mW
Caution : Electro Static Discharge sensitive device
0~0.1
0.150.05
1
TBN6301 Series
Electrical Characteristics (TA = 25 )
Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Gain Bandwidth Product IEBO hFE fT Test Conditions VCB = 15 V, IE = 0 mA VCE = 8 V, IB = 0 mA VEB = 2 V, IC = 0 mA VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 10 mA VCE = 5 V, IC = 20 mA Insertion Power Gain |S21|2 VCE = 3 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 20 mA, f = 1 GHz Noise Figure Reverse Transfer Capacitance NF Cre VCE = 3 V, IC = 10 mA, f = 1 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz 80 5 6 7 7 6 7.5 9 9.5 1.4 1.1 1.8 pF Min. Typ. Max. 0.5 10 0.5 250 GHz GHz dB dB Unit
hFE Classification
Marking hFE Value SB2 80 - 160 SB1 125 - 250
Available Package
Product TBN6301U TBN6301E Package SOT-323 SOT-523
Unit in mm
Dimension 2.0 1.25, 1.0t 1.6 0.8, 0.8t
2
TBN6301 Series
Typical Characteristics ( TA = 25 , unless otherwise specified)
Power Dissipation vs. Ambient Temperature
200
Reverse Transfer Capacitance vs. Collector to Base Voltage
Reverse Transfer Capacitance, Cre (pF)
1.4 f = 1 MHz
Collector Power Dissipation, PC (mW)
150
1.2
100
1.0
50
0 0 25 50 75 100
o
125
150
0.8 0 1 2 3 4 5 6 7
Ambient Temperature, TA ( C)
Collector to Base Voltage, VCB (V)
DC Current Gain vs. Collector Current
400 350 300 VCE = 3 V
30 25 20 15 10 5
Collector Current vs. Base to Emitter Voltage
VCE = 3 V
250 200 150 100 50 0 0.1
Collector Current, IC (mA)
1 10 100
DC Current Gain, hFE
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Current, IC (mA)
Base to Emitter Voltage, VBE (V)
3
TBN6301 Series
Base Current, Collector Current vs. Base to Emitter Voltage
Base Current, IB or Collector Current, IC (A)
10 10 10 10 10 10 10 10 10
0
Collector Current vs. Collector to Emitter Voltage
70 IB Step = 50 A
-1
-2
Collector Current, IC (mA)
VCE = 3 V
60 50 40 30 20 10
-3
-4
-5
-6
-7
-8
10
-9
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0.0
0
1
2
3
4
5
6
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
Gain Bandwidth Product vs. Collector Current
14
30
Insertion Power Gain vs. Frequency
VCE = 3 V IC = 10 mA
Gain Bandwidth Product, fT (GHz)
12 10 8 6 4 2 0 1
Insertion Power Gain, |S21| (dB)
VCE = 3 V VCE = 5 V VCE = 7 V
25 20 15 10 5 0 0.1
2
10
100
1
Collector Current, IC (mA)
Frequency (GHz)
4
TBN6301 Series
Insertion Power Gain vs. Collector Current
16
20
Maximum Available Gain vs. Collector Current
Maximum Available Gain, MAG (dB)
VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz
Insertion Power Gain, |S21| (dB)
14 12 10 8 6 4 2 0 1
VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz
2
15
10
5
0
10
100
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
5
TBN6301 Series
Dimensions of TBN6301E in mm
SOT-523
Pin Configuration
Pin No. 1 2 3 Symbol B E C Description Base Emitter Collector
6

▲Up To Search▲

Price & Availability of TBN6301

	To Download TBN6301 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .